A fully Integrated Regulated Charge Pump in 1.2/2.5-V 90-nm CMOS Technology
Keywords:
Regulated charge pump, automatic pumping current, variable pumping frequency, high current load drivability, power efficiencyAbstract
A fully integrated regulated charge pump is designed in 1.2/2.5-V 90-nm CMOS technology. The charge pump exploits two control schemes to provide stable output voltage with small ripple output voltage and high current load drivability. The first is automatic pumping current control scheme which optimizes the pumping current flowing through flying capacitor to reduce ripple voltage. The second is variable pumping frequency control scheme which changes pumping frequency by controlling a VCO. This charge pump delivers regulated 3.8-V output voltage from a supply voltage of 2.5-V with a flying capacitor of 590-nF, while providing 50-mA of load current. The measured output ripple voltage is less than 20-mV with a 2.2-
Downloads
Downloads
Published
Issue
Section
License
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (SeeThe Effect of Open Access).
